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C30645 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Large Area InGaAs Avalanche Photodiodes - Excelitas

भाग संख्या C30645
समारोह Large Area InGaAs Avalanche Photodiodes
मैन्युफैक्चरर्स Excelitas 
लोगो Excelitas लोगो 
पूर्व दर्शन
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<?=C30645?> डेटा पत्रक पीडीएफ

C30645 pdf
C30645 and C30662 Series
Large area InGaAs Avalanche Photodiodes
Table 1: Electrical Characteristics at TA = 22°C
Parameter
Active Diameter
Breakdown voltage (Vbr)
Operation Point from Breakdown (Vbr-Vop)
Temperature Coefficient of Vbr for Constant Gain
Responsivity (@ 1550 nm)
Dark Current (@ M=10) (id)
Spectral Noise Current (@ M=10) (in)
Capacitance
Bandwidth (@ M=10)
Quantum Efficiency (1300-1550 nm)
Maximum Useable Gain (M)
C30645
Min Typ Max
80
45 50 70
0.14 0.20
9.3
3 50
0.2 1.0
1.25
1000
75
10 20
C30662
Min Typ Max
200
45 50 70
0.14 0.20
9.3
45 150
0.7 1.5
2.5
600 850
75
10 20
C30662-1
Min Typ Max
200
45 50 70
4.0
Units
µm
V
V
V / deg C
A/W
nA
pA/rt(Hz)
pF
MHz
%
No units
Conditions
(@ M=10) (Note 6)
Notes for Table 1
1. A specific voltage, , is supplied with each device. When the photodiode is operated at this voltage (at 22 °C), the device will meet the
electrical characteristic limits shown above. The voltage value will be within the range of 45 to 70 volts.
2. The voltage dependence of the gain, , for gains above 4, is given approximately by the following empirical formula yielding a rough
approximation of the sensitivity:
where:
will vary from APD to APD, but should be within 40-50 for most InGaAs APDs
3. Gain, and quantum efficiency, , are not directly measurable quantities. The numbers quoted are estimated typical values. Gain,
quantum efficiency and responsivity are related by the following:
expressed in A/W
where:
is the quantum efficiency, expressed in %
is the wavelength in units of mm, and
is the APD gain
4. The detector noise current expressed in , is given by the following expression:
√(
)
where:
is the electron charge,
( ) ( ), is the excess noise factor, around 5.5 for InGaAs,
is ionization coefficient, typically around 0.45 for InGaAs, and
and are the un-multiplied and multiplied portions of the dark current, respectively.
The total dark current is given by:
However, since both and are somewhat voltage dependent, and is not directly measurable (see Note 3), it is not usually possible
to determine both and unambiguously. Since system performance depends on noise current and responsivity, these measurable
quantities are the ones that have been specified.
5. Most devices can be operated at gains up to about 30 or more, but with values of noise current correspondingly higher, as indicated by the
discussion in Note 4 above.
6. The product C30662EH can be ordered with a guaranteed minimal delta of the operation voltage bias from the voltage breakdown ( - ),
also known as deltaV or dV. Using the “-1” suffix specifies a dV larger than 4.0 V. Please contact us for more information.
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C30645 C30662 Series-Rev.1.2-2013.02

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