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HY4903P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - HOOYI

भाग संख्या HY4903P
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स HOOYI 
लोगो HOOYI लोगो 
पूर्व दर्शन
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<?=HY4903P?> डेटा पत्रक पीडीएफ

HY4903P pdf
HY4903P/B
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
IDM Pulsed Drain Current *
ID Continuous Drain Current
PD Maximum Power Dissipation
TC=25°C
TC=25°C
TC=100°C
TC=25°C
Tc=100°C
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
EAS Avalanche Energy,Single Pulsed
L=0.5mH
Note * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=24V
Rating
30
±20
175
-55 to 175
290
1000**
290
200
214
107
0.7
62.5
1325***
Electrical Characteristics (TC = 25°C Unless Otherwise Noted)
Unit
V
°C
°C
A
A
A
W
°C/W
°C/W
mJ
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) * Drain-Source On-state Resistance
Diode Characteristics
VSD * Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
HY4903
Unit
Min. Typ. Max.
VGS=0V, IDS=250µA
30 -
-V
VDS=30V, VGS=0V
TJ=85°C
-
-
-1
µA
- 30
VDS=VGS, IDS=250µA
1.0 - 3.0 V
VGS=±20V, VDS=0V
- - ±100 nA
VGS=10V, IDS=145A
- 1.6 2.0 m
VGS=4.5V, IDS=145A
2.0 3.0 m
ISD=145 A, VGS=0V
IDS=145A, dlSD/dt=100A/µs
-
-
-
0.8 1.0 V
38 - ns
80 - nC
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डाउनलोड[ HY4903P Datasheet.PDF ]


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