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IRF9630 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - Vishay

भाग संख्या IRF9630
समारोह Power MOSFET
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=IRF9630?> डेटा पत्रक पीडीएफ

IRF9630 pdf
www.vishay.com
IRF9630, SiHF9630
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.50
-
MAX.
62
-
1.7
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = -250 μA
Reference to 25 °C, ID = -1 mA
VDS = VGS, ID = -250 μA
VGS = ± 20 V
VDS = -200 V, VGS = 0 V
VDS = -160 V, VGS = 0 V, TJ = 125 °C
VGS = -10 V
ID = -3.9 A b
VDS = -50 V, ID = -3.9 A b
-200
-
-2.0
-
-
-
-
2.8
-
-0.24
-
-
-
-
-
-
-
-
-4.0
± 100
-100
-500
0.80
-
V
V/°C
V
nA
μA
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = -25 V,
f = 1.0 MHz, see fig. 5
VGS = -10 V
ID = -6.5 A,
VDS = -160 V,
see fig. 6 and 13 b
VDD = -100 V, ID = -6.5 A,
Rg = 12 , RD = 15, see fig. 10 b
- 700 -
- 200 - pF
- 40 -
- - 29
- - 5.4 nC
- - 15
- 12 -
- 27 -
ns
- 28 -
- 24 -
Internal Drain Inductance
Internal Source Inductance
LD Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
- 4.5 -
nH
- 7.5 -
Gate Input Resistance
Drain-Source Body Diode Characteristics
Rg
f = 1 MHz, open drain
0.6 - 3.7
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Current a
integral reverse
ISM p -n junction diode
D
G
S
- - -6.5
A
- - -26
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD TJ = 25 °C, IS = -6.5 A, VGS = 0 V b - - -6.5 V
trr
Qrr
TJ = 25 °C, IF = -6.5 A, dI/dt = 100 A/μs b
-
-
200 300
ns
1.9 2.9 μC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
S16-0754-Rev. D, 02-May-16
2
Document Number: 91084
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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