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IRF730A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - Vishay

भाग संख्या IRF730A
समारोह Power MOSFET
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=IRF730A?> डेटा पत्रक पीडीएफ

IRF730A pdf
IRF730A, SiHF730A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Case (Drain)
Case-to-Sink, Flat, Greased Surface
RthJC
RthCS
Maximum Junction-to-Ambient
RthJA
TYP.
-
0.50
-
MAX.
1.70
-
62
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(on)
gfs
Ciss
Coss
Crss
Output Capacitance
Coss
Effective Output Capacitance
Coss eff.
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
td(on)
tr
td(off)
tf
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 400 V, VGS = 0 V
VDS = 320 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.3 Ab
VDS = 50 V, ID = 3.3 A
400 -
- 0.5
-V
- V/°C
2.0 - 4.5 V
- - ± 100 nA
- - 25
μA
- - 250
- - 1.0 Ω
3.1 -
-S
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VDS = 1.0 V, f = 1.0 MHz
VGS = 0 V
VDS = 320 V, f = 1.0 MHz
VDS = 0 V to 320 Vc
VGS = 10 V
ID = 3.5 A, VDS = 320 V
see fig. 6 and 13b
VDD = 200 V, ID = 3.5 A
Rg = 12 Ω, RD = 57 Ω,
see fig. 10b
-
-
-
-
-
-
-
-
-
-
-
-
-
600 -
103 -
4.0 -
pF
890 -
30 -
45 -
- 22
- 5.8 nC
- 9.3
10 -
22 -
ns
20 -
16 -
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
- - 5.5
A
- - 22
Body Diode Voltage
VSD
TJ = 25 °C, IS = 5.5 A, VGS = 0 Vb
- - 1.6 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 3.5 A, dI/dt = 100 A/μsb
-
370 550 ns
Qrr - 1.6 2.4 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
www.vishay.com
2
Document Number: 91045
S11-0508-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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