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IRF840AS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - Vishay

भाग संख्या IRF840AS
समारोह Power MOSFET
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=IRF840AS?> डेटा पत्रक पीडीएफ

IRF840AS pdf
IRF840AS, SiHF840AS, IRF840AL, SiHF840AL
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN.
-
-
TYP.
-
-
MAX.
40
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mAd
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 4.8 Ab
VDS = 50 V, ID = 4.8 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz
VDS = 400 V, f = 1.0 MHz
VDS = 0 V to 480 Vc, d
VGS = 10 V
ID = 8.0 A, VDS = 400 V,
see fig. 6 and 13b, d
VDD = 250 V, ID = 8.0 A,
Rg = 9.1 , RD = 31 , see fig. 10b, d
MIN.
500
-
2.0
-
-
-
-
3.7
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
- -V
0.58 - V/°C
- 4.0 V
- ± 100 nA
- 25
μA
- 250
- 0.85
- -S
1018
155
8.0
1490
42
56
-
-
-
11
23
26
19
-
-
-
38
9.0
18
-
-
-
-
pF
nC
ns
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
- - 8.0
A
- - 32
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 8.0 A, VGS = 0 Vb
- - 2.0 V
trr
- 422 633 ns
TJ = 25 °C, IF = 8.0 A, dI/dt = 100 A/μsb
Qrr - 2.0 3.0 μC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 %to 80 % VDS.
d. Uses IRF840A, SiHF840A data and test conditions
www.vishay.com
2
Document Number: 91066
S11-1050-Rev. D, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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