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IRF840B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - D Series Power MOSFET - Vishay

भाग संख्या IRF840B
समारोह D Series Power MOSFET
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=IRF840B?> डेटा पत्रक पीडीएफ

IRF840B pdf
www.vishay.com
IRF840B
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
RthJA
RthJC
TYP.
-
-
MAX.
62
0.8
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductancea
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 250 μA
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 4 A
VDS = 20 V, ID = 4 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Relatedb
Effective Output Capacitance, Time
Relatedc
Ciss
Coss
Crss
Co(er)
Co(tr)
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
VDS = 0 V to 400 V, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 10 V
ID = 4 A, VDS = 400 V
VDD = 400 V, ID = 4 A
Rg = 9.1 , VGS = 10 V
f = 1 MHz, open drain
MIN. TYP.
500 -
- 0.58
3-
--
--
--
- 0.70
-3
- 527
- 52
-8
- 46
- 64
- 15
-4
-7
- 13
- 16
- 17
- 11
- 1.8
Continuous Source-Drain Diode Current IS MOSFET symbol
showing the
Pulsed Diode Forward Current
integral reverse
ISM p - n junction diode
D
G
S
--
--
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
VSD
trr
Qrr
IRRM
TJ = 25 °C, IS = 4 A, VGS = 0 V
TJ = 25 °C, IF = IS = 4 A,
dI/dt = 100 A/μs, VR = 20 V
--
- 308
- 1.8
- 11
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
c. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
MAX. UNIT
-
-
5
± 100
1
10
0.85
-
V
V/°C
V
nA
μA
S
-
-
-
pF
-
-
30
- nC
-
26
32
ns
34
22
-
8
A
32
1.2 V
- ns
- μC
-A
S12-1375-Rev. A, 18-Jun-12
2
Document Number: 91521
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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