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STD19NF20 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL POWER MOSFET - STMicroelectronics

भाग संख्या STD19NF20
समारोह N-CHANNEL POWER MOSFET
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=STD19NF20?> डेटा पत्रक पीडीएफ

STD19NF20 pdf
STB19NF20,STD19NF20,STF19NF20,STP19NF20
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage
VGS Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM(2)
Drain current (pulsed)
PTOT
Total dissipation at Tcase = 25 °C
VISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t = 1 s, TC = 25 °C)
dv/dt(3)
Peak diode recovery voltage slope
Tstg Storage temperature range
Tj Operating junction temperature range
1. This value is limited by package.
2. Pulse width is limited by safe operating area.
3. ISD ≤ 15 A, di/dt ≤ 300 A/μs, VDD = 80 % V(BR)DSS
Value
D²PAK, DPAK,
TO-220
TO-220FP
200
±20
15 15(1)
9.45
9.45(1)
60 60(1)
90 25
2.5
15
-55 to 150
Unit
V
A
A
W
kV
V/ns
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case
Rthj-pcb(1) Thermal resistance junction-pcb
Rthj-amb Thermal resistance junction-ambient
1. When mounted on an 1-inch² FR-4, 2oz Cu board
D²PAK
35
Value
DPAK TO-220 TO-220FP
1.39 5
50
62.5
Unit
°C/W
Symbol
IAR
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
Single-pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
15
110
Unit
A
mJ
DS4935 - Rev 7
page 2/30

विन्यास 30 पेज
डाउनलोड[ STD19NF20 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
STD19NF20N-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics


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