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CEM8311 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual P-Channel Enhancement Mode Field Effect Transistor - CET

भाग संख्या CEM8311
समारोह Dual P-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स CET 
लोगो CET लोगो 
पूर्व दर्शन
1 Page
		
<?=CEM8311?> डेटा पत्रक पीडीएफ

CEM8311 pdf
CEM8311
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
Symbol
Test Condition
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = -250µA
VDS = -24V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = -250µA
VGS = -10V, ID = -7A
VGS = -4.5V, ID = -5.8A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
gFS
Ciss
Coss
Crss
VDS = -10V, ID = -7A
VDS = -15V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -10V, ID = -1A,
VGS = -10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -15V, ID = -7A,
VGS = -4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -2.1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
-30
-1
Typ
16
25
15
2020
395
202
16
7
105
40
16.4
5.8
6.5
Max Units
-1
100
-100
V
µA
nA
nA
-3 V
20 m
33 m
S
pF
pF
pF
30 ns
15 ns
200 ns
80 ns
22 nC
nC
nC
-2.1 A
-1.2 V
5 - 148

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डाउनलोड[ CEM8311 Datasheet.PDF ]


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