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CEC8218 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual N-Channel Enhancement Mode Field Effect Transistor - CET

भाग संख्या CEC8218
समारोह Dual N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स CET 
लोगो CET लोगो 
पूर्व दर्शन
1 Page
		
<?=CEC8218?> डेटा पत्रक पीडीएफ

CEC8218 pdf
CEC8218
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Symbol
Test Condition
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 4.5V, ID = 5A
VGS = 2.5V, ID = 4A
VGS = 1.8V, ID = 2A
Dynamic Characteristics d
Forward Transconductance
Switching Characteristics d
gFS VDS = 10V, ID = 5A
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 10V, ID = 1A,
VGS = 4.5V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 10V, ID = 5A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 1.5A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
20
0.5
Typ
16
21
35
17
0.34
0.86
3.60
2
4.2
1.2
2.5
Max Units
V
1 µA
10 µA
-10 µA
1.2 V
20 m
28 m
48 m
S
0.68
1.72
7.5
4
5.6
µs
µs
µs
µs
nC
nC
nC
6.5 A
1.2 V
2

विन्यास 4 पेज
डाउनलोड[ CEC8218 Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
CEC8218Dual N-Channel Enhancement Mode Field Effect TransistorCET
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