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SM4377NSKP डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - Sinopower

भाग संख्या SM4377NSKP
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स Sinopower 
लोगो Sinopower लोगो 
पूर्व दर्शन
1 Page
		
<?=SM4377NSKP?> डेटा पत्रक पीडीएफ

SM4377NSKP pdf
SM4377NSKP
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VD S S
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
IDP Pulse Drain Current Tested
ID a Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
ID b Continuous Drain Current
PD b Maximum Power Dissipation
RθJA b Thermal Resistance-Junction to Ambient
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Steady State
TA=25°C
TA=70°C
TA=25°C
TA=70°C
t 10s
Steady State
30
±20
150
-55 to 150
30
120
85
50*
35
32
12.8
3.9
12.8
10.2
1.73
1.11
28
72
V
°C
°C
A
A
A
W
°C/W
A
W
°C/W
IAS c Avalanche Current, Single pulse
L=0.1mH
L=0.3mH
L=0.5mH
25
19 A
14
L=0.1mH
31
EAS c Avalanche Energy, Single pulse
L=0.3mH
54 mJ
L=0.5mH
50
Note a* Current limited by bond wire.
Note bSurface Mounted on 1in2 pad area, t =999sec.
Note cUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright © Sinopower Semiconductor, Inc.
Rev. A.9 - August, 2015
2
www.sinopowersemi.com

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