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STPS30L30DJF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High efficiency power Schottky diode - STMicroelectronics

भाग संख्या STPS30L30DJF
समारोह High efficiency power Schottky diode
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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STPS30L30DJF pdf
Characteristics
1 Characteristics
STPS30L30DJF
Table 2.
Symbol
Absolute ratings (limiting values with anode terminals short-circuited)
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
30
IF(RMS) Forward rms current
45
IF(AV) Average forward current δ = 0.5
Tc = 110 °C
30
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
250
PARM Repetitive peak avalanche power
tp = 1 µs, Tj = 25 °C
1300
VARM
Maximum repetitive peak avalanche
voltage
tp <1 µs, Tj < 150 °C,
IAR < 11 A
35
Tstg Storage temperature range
-65 to + 175
Tj Maximum operating junction temperature (1)
150
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Symbol
Parameter
Value
V
A
A
A
W
V
°C
°C
Unit
Rth(j-c) Junction to case
2 °C/W
Table 4.
Symbol
Static electrical characteristics (anode terminals short-circuited)
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1)
Reverse leakage
current
Tj = 25 °C
VR = 30 V
Tj = 125 °C
-
-
Tj = 25 °C IF = 15 A
-
VF(1)
Tj = 125 °C
Forward voltage drop
Tj = 25 °C
IF = 15 A
IF = 30 A
-
-
Tj = 125 °C IF = 30 A
-
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.27 x IF(AV) + 0.006 x IF2(RMS)
- 0.75
100 230
- 0.44
0.30 0.35
- 0.51
0.38 0.45
mA
mA
V
2/7 Doc ID 022946 Rev 1

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