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STPS30L120C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power Schottky rectifier - STMicroelectronics

भाग संख्या STPS30L120C
समारोह Power Schottky rectifier
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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<?=STPS30L120C?> डेटा पत्रक पीडीएफ

STPS30L120C pdf
Characteristics
1 Characteristics
STPS30L120C
Table 2.
Symbol
Absolute ratings (limiting values, per diode)
Parameter
Value
VRRM
IF(RMS)
IF(AV)
Repetitive peak reverse voltage
Forward rms current
Average forward
current, δ = 0.5
Total package
120
30
30
IFSM
Surge non repetitive
forward current
tp = 10 ms sinusoidal
220
PARM
Repetitive peak
avalanche power
tp = 1 µs, Tj = 25 °C
11500
VARM(1)
Maximum repetitive
peak avalanche voltage
tp = 1 µs, Tj < 150 °C, IAR < 23 A
150
VASM(1)
Maximum single pulse
peak avalanche voltage
tp = 1 µs, Tj < 150 °C, IAR < 23 A
150
Tstg Storage temperature range
Tj Maximum operating junction temperature(2)
-65 to + 175
150
1. Refer to Figure 13
2.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal parameters
Symbol
Parameter
Value
Unit
V
A
A
A
W
V
V
°C
°C
Unit
Rth(j-c) Junction to case
Rth(c) Coupling
TO-220AB, I2PAK
TO-220FPAB
TO-220AB, I2PAK
TO-220FPAB
Per diode
Total
Per diode
Total
Total
1.3
0.7
4.5
3.8 °C/W
0.1
3
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)
2/10 Doc ID 16313 Rev 3

विन्यास 10 पेज
डाउनलोड[ STPS30L120C Datasheet.PDF ]


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