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MDF10N65B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - MagnaChip

भाग संख्या MDF10N65B
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स MagnaChip 
लोगो MagnaChip लोगो 
पूर्व दर्शन
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<?=MDF10N65B?> डेटा पत्रक पीडीएफ

MDF10N65B pdf
Ordering Information
Part Number
MDF10N65BTH
Temp. Range
-55~150oC
Package
TO-220F
Packing
Tube
Electrical Characteristics (Ta =25oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
IS
VSD
trr
Qrr
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 650V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 4A
VDS = 30V, ID = 4A
VDS = 520V, ID = 8.0A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 325V, ID = 8.0A,
RG = 25Ω(3)
IS = 8.0A, VGS = 0V
IF = 8.0A, dl/dt = 100A/μs(3)
Min
650
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Note :
1.
2.
3.
4.
Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150°C.
ISD ≤8.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
L=7.0mH, IAS=8.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C,
RoHS Status
Halogen Free
Typ Max Unit
--
V
- 4.0
- 1 μA
- 100 nA
0.85 1.0 Ω
10.6 -
S
29.3
7.0
11.2
1202
7.08
128.3
19.4
48
96.5
49
-
-
-
-
-
-
-
-
-
-
nC
pF
Ns
8 -A
- 1.4 V
326 - ns
5.9 - μC
Jun. 2010 Version 1.2
2 MagnaChip Semiconductor Ltd.

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डाउनलोड[ MDF10N65B Datasheet.PDF ]


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