DataSheet.in

FDI150N10 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDI150N10
समारोह N-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDI150N10?> डेटा पत्रक पीडीएफ

FDI150N10 pdf
Package Marking and Ordering Information
Part Number
FDI150N10
Top Mark
FDI150N10
Package
I2-PAK
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TC= 25oC
ID = 250 μA, Referenced to 25oC
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
100
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 49 A
VDS = 20 V, ID = 49 A
2.5
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1 MHz
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(tot)
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 49 A,
VGS = 10 V, RG = 25 Ω
VDS = 80 V, ID = 49 A,
VGS = 10 V
(Note 4)
(Note 4)
-
-
-
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 49 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 49 A,
dIF/dt = 100 A/μs
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: L = 0.11 mH, IAS = 49 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3: ISD 49 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4: Essentially independent of operating temperature typical characteristics.
-
-
-
-
-
Typ.
-
0.1
-
-
-
-
12
156
3580
340
140
47
164
86
83
53
19
15
-
-
-
41
70
Quantity
50 units
Max. Unit
-
-
1
500
±100
V
V/oC
μA
nA
4.5 V
16 mΩ
-S
4760
450
210
pF
pF
pF
104 ns
338 ns
182 ns
176 ns
69 nC
- nC
- nC
57 A
228 A
1.3 V
- ns
- nC
©2009 Fairchild Semiconductor Corporation
FDI150N10 Rev. C1
2
www.fairchildsemi.com

विन्यास 8 पेज
डाउनलोड[ FDI150N10 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDI150N10N-Channel PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English