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STD110N02R डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - ON Semiconductor

भाग संख्या STD110N02R
समारोह Power MOSFET
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
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<?=STD110N02R?> डेटा पत्रक पीडीएफ

STD110N02R pdf
NTD110N02R, STD110N02R
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 V, ID = 250 mA)
Positive Temperature Coefficient
V(BR)DSS
24 28
15
V
mV/°C
Zero Gate Voltage Drain Current
(VDS = 20 V, VGS = 0 V)
(VDS = 20 V, VGS = 0 V, TJ = 125°C)
IDSS
mA
1.5
10
Gate−Body Leakage Current (VGS = ±20 V, VDS = 0 V)
ON CHARACTERISTICS (Note 3)
IGSS
±100
nA
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mA)
Negative Threshold Temperature Coefficient
VGS(th)
V
1.0 1.5 2.0
5.0 mV/°C
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 10 V, ID = 110 A)
(VGS = 4.5 V, ID = 55 A)
(VGS = 10 V, ID = 20 A)
(VGS = 4.5 V, ID = 20 A)
RDS(on)
mW
4.1
5.5
3.9 4.6
5.5 6.2
Forward Transconductance (VDS = 10 V, ID = 15 A) (Note 3)
DYNAMIC CHARACTERISTICS
gFS 44 Mhos
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 20 V, VGS = 0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 4)
Ciss
Coss
Crss
2710
1105
450
3440
1670
640
pF
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(VGS = 10 V, VDD = 10 V,
ID = 40 A, RG = 3.0 W)
(VGS = 4.5 V, ID = 40 A,
VDS = 10 V) (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
td(on)
tr
td(off)
tf
QT
QGS
QGD
11 22
39 80
27 40
21 40
23.6 28
5.1
11
ns
nC
Forward On−Voltage
(IS = 20 A, VGS = 0 V) (Note 3)
(IS = 55 A, VGS = 0 V)
(IS = 20 A, VGS = 0 V, TJ = 125°C)
VSD
0.82 1.2
0.99
0.65
V
Reverse Recovery Time
(IS = 30 A, VGS = 0 V,
dIS/dt = 100 A/ms) (Note 3)
trr
ta
tb
36.5 ns
30
25
Reverse Recovery Stored Charge
Qrr
0.048
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
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भाग संख्याविवरणविनिर्माण
STD110N02RPower MOSFETON Semiconductor
ON Semiconductor


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