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FDP18N20F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel UniFETTM FRFET MOSFET - Fairchild Semiconductor

भाग संख्या FDP18N20F
समारोह N-Channel UniFETTM FRFET MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDP18N20F?> डेटा पत्रक पीडीएफ

FDP18N20F pdf
Package Marking and Ordering Information
Part Number
FDP18N20F
FDPF18N20FT
Top Mark
FDP18N20F
FDPF18N20FT
Package
TO-220
TO-220F
Packing Method
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Quantity
50 units
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TJ = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 200 V, VGS = 0 V
VDS = 160 V, TC = 125oC
VGS = ±30 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 9 A
VDS = 20 V, ID = 9 A
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 160 V, ID = 18 A,
VGS = 10 V
(Note 4)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 100 V, ID = 18 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 18 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 18 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 2 mH, IAS = 18 A, VDD = 50 V, RG = 2 5Ω, starting TJ = 25°C.
3. ISD 18 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Min.
200
-
-
-
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.2
-
-
-
-
0.12
13.6
885
200
24
20
5
9
16
50
50
40
-
-
-
80
240
Max. Unit
-
-
10
100
±100
V
V/oC
μA
nA
5.0 V
0.14 Ω
-S
1180
270
35
26
-
-
pF
pF
pF
nC
nC
nC
40 ns
110 ns
110 ns
90 ns
18 A
72 A
1.5 V
- ns
- nC
©2009 Fairchild Semiconductor Corporation
FDP18N20F / FDPF18N20FT Rev. C1
2
www.fairchildsemi.com

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