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FDD850N10LD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel PowerTrench MOSFET + Diode - Fairchild Semiconductor

भाग संख्या FDD850N10LD
समारोह N-Channel PowerTrench MOSFET + Diode
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDD850N10LD?> डेटा पत्रक पीडीएफ

FDD850N10LD pdf
Package Marking and Ordering Information
Part Number
FDD850N10LD
Top Mark
850N10LD
Package Packing Method
TO-252 5L Tape and Reel
Reel Size
13”
Tape Width
16 mm
Electrical Characteristics of the MOSFET TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, Referenced to 25oC
VDS = 80 V, VGS = 0 V
VDS = 80 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
100
-
-
-
-
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 12 A
VGS = 5 V, ID =12 A
VDS = 10 V, ID = 15.3 A
1.0
-
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 80 V, ID = 15.3 A
f = 1 MHz
(Note 4)
-
-
-
-
-
-
-
-
Typ.
-
0.1
-
-
-
-
61
64
31
1100
80
42
22.2
12.3
3.0
5.7
1.75
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 50 V, ID = 15.3 A,
VGS = 5 V, RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 12 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 15.3 A, VDS = 80 V,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1 mH, IAS = 9.1 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD 15.3 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
-
-
-
-
-
-
-
-
-
17
21
27
8
-
-
-
38
50
Quantity
2500 units
Max. Unit
-
-
1
500
±100
V
V/oC
μA
nA
2.5 V
75
96
mΩ
-S
1465
105
-
28.9
16.0
-
-
-
pF
pF
pF
nC
nC
nC
nC
Ω
44 ns
52 ns
64 ns
26 ns
15.3 A
46 A
1.3 V
- ns
- nC
©2013 Fairchild Semiconductor Corporation
FDD850N10LD Rev. C2
2
www.fairchildsemi.com

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डाउनलोड[ FDD850N10LD Datasheet.PDF ]


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