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FDD8453LZ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power Trench MOSFET - Fairchild Semiconductor

भाग संख्या FDD8453LZ
समारोह N-Channel Power Trench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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FDD8453LZ pdf
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
40
V
ID = 250µA, referenced to 25°C
36 mV/°C
VDS = 32V, VGS = 0V
VGS = ±20V, VDS = 0V
1 µA
±10 µA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250µA
ID = 250µA, referenced to 25°C
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 13A
VGS = 10V, ID = 15A,
TJ = 125°C
VDS = 5V, ID = 15A
1.0 1.8 3.0
V
-6.0 mV/°C
5.8 6.7
6.8 8.7 m
9.1 10.6
77 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 20V, VGS = 0V,
f = 1MHz
f = 1MHz
2640
320
190
2.3
3515
425
285
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 20V, ID = 15A,
VGS = 10V, RGEN = 6
VGS = 0V to 10V
VGS = 0V to 5V
VDD = 20V,
ID = 15A
11 19 ns
6 12 ns
37 58 ns
5 10 ns
46 64 nC
24 33 nC
7 nC
8 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = 2.0A (Note 2)
VGS = 0V, IS = 15A (Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 15A, di/dt = 100A/µs
0.7 1.2
0.8 1.3
V
25 40 ns
20 32 nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 40°C/W when mounted on a
1 in2 pad of 2 oz copper
b) 96°C/W when mounted
on a minimum pad.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 13A, VDD = 40V, VGS = 10V.
4: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev. 1.1
2
www.fairchildsemi.com

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