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2DB1132Q डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 32V PNP POWER SWITCHING TRANSISTOR - Diodes

भाग संख्या 2DB1132Q
समारोह 32V PNP POWER SWITCHING TRANSISTOR
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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<?=2DB1132Q?> डेटा पत्रक पीडीएफ

2DB1132Q pdf
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
2DB1132P/Q/R
Value
-40
-32
-5
-1
-2
Unit
V
V
V
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 7)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
1
1.5
2.0
125
83
60
22
-55 to +150
Unit
W
°C/W
°C/W
°C
ESD Ratings (Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V 3A
VC
Notes:
5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted on 25mm x 25mm 1oz copper.
7. Same as note (5), except the device is mounted on 50mm x 50mm 1oz copper.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
2DB1132P/Q/R
Document number: DS31142 Rev: 6 - 2
2 of 6
www.diodes.com
December 2013
© Diodes Incorporated

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
2DB1132P32V PNP POWER SWITCHING TRANSISTORDiodes
Diodes
2DB1132Q32V PNP POWER SWITCHING TRANSISTORDiodes
Diodes


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