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LBAV170LT1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Surface Mount Low Leakge Diode - Leshan Radio Company

भाग संख्या LBAV170LT1G
समारोह Surface Mount Low Leakge Diode
मैन्युफैक्चरर्स Leshan Radio Company 
लोगो Leshan Radio Company लोगो 
पूर्व दर्शन
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<?=LBAV170LT1G?> डेटा पत्रक पीडीएफ

LBAV170LT1G pdf
LESHAN RADIO COMPANY, LTD.
LBAS116LT1G, LBAW156LT1G,
LBAV170LT1G, LBAV199LT1G
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 3)
Forward Voltage
Leakage Current (Note 3)
Total Capacitance
Reverse Recovery Time
Symbol Min Typ Max Unit
Test Condition
V(BR)R
85
¾
¾
V IR = 100mA
0.90
IF = 1.0mA
VF
¾
¾
1.0
1.1
V
IF = 10mA
IF = 50mA
1.25
IF = 150mA
IR
¾
¾
5.0
80
nA VR = 75V
nA VR = 75V, Tj = 150°C
CT ¾ 2 ¾ pF VR = 0, f = 1.0MHz
trr
¾
¾
3.0
ms
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100W
Notes: 3. Short duration test pulse used to minimize self-heating effect.
250 1000
200
150
100
50
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
10
VR = 75V
1
0.1
0
50 100 150 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 3 Typical Reverse Characteristics
100
10
1.0
0.1
0.01
0
0.4 0.8 1.2 1.6 2.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
160
140
120
100
80
60
40
IF = 1mA
IF = 10mA
IF = 150mA
IF = 50mA
20
0
0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40
VF(AVE), AVERAGE FORWARD VOLTAGE (V)
Fig. 4 Typical Forward Voltage vs Ambient Temperature
Rev.O 2/3

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भाग संख्याविवरणविनिर्माण
LBAV170LT1GSurface Mount Low Leakge DiodeLeshan Radio Company
Leshan Radio Company


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