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6N136 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IRED & PHOTO IC - Toshiba Semiconductor

भाग संख्या 6N136
समारोह IRED & PHOTO IC
मैन्युफैक्चरर्स Toshiba Semiconductor 
लोगो Toshiba Semiconductor लोगो 
पूर्व दर्शन
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<?=6N136?> डेटा पत्रक पीडीएफ

6N136 pdf
Absolute Maximum Ratings (Ta = 25°C)
6N135,6N136
Characteristic
Symbol
Rating
Unit
Forward current
(Note 1)
Pulse forward current
(Note 2)
Total pulse forward current
(Note 3)
Reverse voltage
Diode power dissipation
(Note 4)
Output current
Peak output current
Emitterbase reverse voltage (pin 57)
Supply voltage
Output voltage
Base current (pin 7)
Output power dissipation
(Note 5)
Operating temperature range
Storage temperature range
Lead solder temperature (10s)
(Note 6)
Isolation voltage
(Note 7)
IF
IFP
IFPT
VR
PD
IO
IOP
VEB
VCC
VO
IB
Po
Topr
Tstg
Tsol
BVS
25
50
1
5
45
8
16
5
0.5 to 15
0.5 to 15
5
100
55 to 100
55 to 125
260
2500
mA
mA
A
V
mW
mA
mA
V
V
V
mA
mW
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc.).
(Note 1)
(Note 2)
(Note 3)
(Note 4)
(Note 5)
(Note 6)
(Note 7)
Derate 0.8 mA above 70°C.
50% duty cycle, 1ms pulse width.
Derate 1.6 mA / °C above 70°C.
Pulse width 1μs, 300pps.
Derate 0.9 mW / °C above 70°C.
Derate 2 mW / °C above 70°C.
Soldering portion of lead: Up to 2mm from the body of the device.
R.H. 60%, AC, 1minute
2 2014-09-22

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डाउनलोड[ 6N136 Datasheet.PDF ]


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