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UF460 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL POWER MOSFET - UTC

भाग संख्या UF460
समारोह N-CHANNEL POWER MOSFET
मैन्युफैक्चरर्स UTC 
लोगो UTC लोगो 
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<?=UF460?> डेटा पत्रक पीडीएफ

UF460 pdf
UF460
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous (VGS=0V)
Pulsed (Note 2)
VGSS
ID
IDM
±20 V
21 A
84 A
Avalanche Current (Note2)
Avalanche Energy
Repetitive(Note2)
Single Pulsed(Note3)
IAR
EAR
EAS
21
30
1200
A
mJ
Power Dissipation (TC=25°С)
PD 190 W
Peak Diode Recovery dv/dt (Note4)
dv/dt
3.5 V/ns
Junction Temperature
TJ
+150
°С
Strong Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. VDD=50V, Starting TJ=25°С, Peak IL=21A
4. ISD21A, di/dt160A/µs, VDD500V, TJ150°С, Suggested=2.35
„ THERMAL DATA
PARAMETER
SYMBOL
MIN TYP MAX UNIT
Junction to Ambient
θJA 30 °С/W
Junction to Case
θjC 0.42 °С/W
„ ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS =0 V, ID =250µA
500
V
Drain-Source Leakage Current
IDSS VDS=400V,VGS =0 V
25 µA
Gate-Source Leakage Current
IGSS VDS =0 V, VGS = ±20V
±100 nA
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Reference to 25°С, ID=1.0mA
0.78
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS =VGS, ID =250 µA 2.0 4.0 V
Static Drain-Source On Resistance (Note)
RDS(ON)
VGS =10V, ID =14A
VGS =10V, ID =21A
270
310
m
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS =25V, VGS =0V, f=1.0MHz
4300
1000
250
pF
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS =250V, VGS =10V,
ID =21A
VDD=250V, ID =21A,
RG =2.35
84
12
60
190
27 nC
135
35
120
130
ns
98
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD IS=21A,VGS=0V, TJ =25°С
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
1.8 V
21
A
84
Reverse Recovery Time
tRR
Reverse Recovery Charge
QRR
Note: Pulse Test: Pulse width 300μs, Duty cycle 2%
IF=21 A, dI/dt=100A/µs,
TJ =25°С,VDD50V(Note)
580 ns
8.1 µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-186.B

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