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FX20VSJ-3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Pch POWER MOSFET - Mitsubishi Electric Semiconductor

भाग संख्या FX20VSJ-3
समारोह Pch POWER MOSFET
मैन्युफैक्चरर्स Mitsubishi Electric Semiconductor 
लोगो Mitsubishi Electric Semiconductor लोगो 
पूर्व दर्शन
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FX20VSJ-3 pdf
PRELIMINARYNSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change.
MITSUBISHI Pch POWER MOSFET
FX20VSJ-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –150V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –10A, VGS = –10V
ID = –10A, VGS = –4V
ID = –10A, VGS = –10V
ID = –10A, VDS = –10V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –80V, ID = –10A, VGS = –10V, RGEN = RGS = 50
IS = –10A, VGS = 0V
Channel to case
IS = –20A, dis/dt = 100A/µs
Min.
–150
–1.0
Limits
Typ.
–1.5
0.23
0.25
–2.3
17.5
4470
248
115
15
42
273
114
–1.0
100
Max.
±0.1
–0.1
–2.0
0.29
0.32
–2.9
–1.5
1.79
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
80
60
40
20
0
0 50 100 150 200
MAXIMUM SAFE OPERATING AREA
–2
–102
–7
–5
–3
–2
tw = 10µs
–101
–7
–5
–3
–2
100µs
1ms
–100
–7
10ms
–5 TC = 25°C
DC
–3 Single Pulse
–2
–2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3 –5–7–103 –2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
Unit
V
µA
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
OUTPUT CHARACTERISTICS
(TYPICAL)
–20
VGS =
TC = 25°C
–10V
–8V Pulse Test
–6V
–16 –4V
–12 –3V
–8
PD = 70W
–2.5V
–4
OUTPUT CHARACTERISTICS
(TYPICAL)
–10
VGS = –10V
–8V
TC = 25°C
Pulse Test
–8 –6V
–4V
–3V
–6
–2.5V
–4
–2
0
0 –2 –4 –6 –8 –10
DRAIN-SOURCE VOLTAGE VDS (V)
0
0 –1.0 –2.0 –3.0 –4.0 –5.0
DRAIN-SOURCE VOLTAGE VDS (V)
Jan.1999

विन्यास 4 पेज
डाउनलोड[ FX20VSJ-3 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

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FX20VSJ-3Pch POWER MOSFETMitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor


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