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RQ3L050GN डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Nch 60V 12A Middle Power MOSFET - Rohm

भाग संख्या RQ3L050GN
समारोह Nch 60V 12A Middle Power MOSFET
मैन्युफैक्चरर्स Rohm 
लोगो Rohm लोगो 
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<?=RQ3L050GN?> डेटा पत्रक पीडीएफ

RQ3L050GN pdf
RQ3L050GN
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Thermal resistance, junction - case
                Datasheet
                    
Symbol
RthJA*4
RthJC*1
Values
Min. Typ. Max.
- - 62.5
- - 8.4
Unit
/W
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
 ΔV(BR)DSS  ID = 1mA
   ΔTj     referenced to 25
Zero gate voltage
drain current
IDSS VDS = 60V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
VGS(th) VDS = VGS, ID = 25μA
Gate threshold voltage
temperature coefficient
 ΔVGS(th)   ID = 1mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
RDS(on)*5
VGS = 10V, ID = 5A
VGS = 6.0V, ID = 5A
VGS = 4.5V, ID = 5A
Gate input resistance
RG f=1MHz, open drain
Forward Transfer
Admittance
|Yfs|*5 VDS = 5V, ID = 5A
Values
Unit
Min. Typ. Max.
60 - - V
- 60 - mV/
- - 10 μA
- - ±10 μA
1.0 - 2.5 V
- -5.6 - mV/
- 43 61
- 47 66 mΩ
- 61 86
- 1.9 -
Ω
3.5 - - S
*1Tc=25
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L 0.2mH, VDD = 30V, RG = 25Ω, STARTING Tch = 25Fig.3-1,3-2
*4 Mounted on a ceramic boad (30×30×0.8mm)
Limited only by maximum chamel temperaturer allowed.
*5 Pulsed
                                             
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20150318 - Rev.002

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भाग संख्याविवरणविनिर्माण
RQ3L050GNNch 60V 12A Middle Power MOSFETRohm
Rohm


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