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FDD4685_F085 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDD4685_F085
समारोह P-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDD4685_F085?> डेटा पत्रक पीडीएफ

FDD4685_F085 pdf
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC<90oC, VGS = 10V)
Pulsed
EAS Single Pulse Avalanche Energe
PD
Power Dissipation
Dreate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
(Note 1)
Ratings
-40
±20
-32
See Figure 4
121
83
0.56
-55 to +175
Units
V
V
A
mJ
W
W/oC
oC
RθJC
Maximum Thermal Resistance Junction to Case
1.8 oC/W
RθJA
Maximum Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
40
oC/W
Package Marking and Ordering Information
Device Marking
Device
FDD4685
FDD4685_F085
Package
TO252
Reel Size
13”
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Tape Width
12mm
Quantity
2500 units
Min Typ Max Units
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
On Characteristics
ID = -250μA, VGS = 0V
ID = -250μA, referenced to 25°C
VDS = -32V,
VGS = ±20V
-40
-
-
-
- -V
-33 - mV/°C
- -1 μA
- ±100 nA
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on) Drain to Source On Resistance
gFS Forward Transconductance
Dynamic Characteristics
VGS = VDS, ID = -250μA
ID = –250μA, referenced to 25°C
ID = -8.4A, VGS= -10V
ID = -7A, VGS= -4.5V
ID
TJ
=
=
-185.40AoC, VGS=
-10V,
ID = –8.4A, VDS = –5V,
-1
-
-
-
-
-
-1.6 -3
V
4.9 - mV/°C
23 27
30 35 mΩ
38 45
23 -
S
Ciss
Coss
Crss
RG
Qg(TOT)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VDS = -20V, VGS = 0V,
f = 1MHz
f = 1MHz
VDD = -20V, VGS = -5V
ID = -8.4A
- 1790 2380 pF
-
260 345
pF
-
140 205
pF
- 4 -Ω
- 19 27 nC
- 5.6 - nC
- 6.1
- nC
FDD4685_F085 Rev. C
2
www.fairchildsemi.com

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डाउनलोड[ FDD4685_F085 Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
FDD4685_F085P-Channel PowerTrench MOSFETFairchild Semiconductor
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