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TYN410RG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 10A SCR - STMicroelectronics

भाग संख्या TYN410RG
समारोह 10A SCR
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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<?=TYN410RG?> डेटा पत्रक पीडीएफ

TYN410RG pdf
TYNx10 Series
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
IGT
VGT
VD = 12 V (D.C.) RL = 33
MAX.
MAX.
VGD VD = VDRM RL = 3.3 k
Tj = 110°C MIN.
tgt VD = VDRM IG = 40 mA dIG/dt = 0.5 A/µs
TYP.
IH IT = 100 mA Gate open
MAX.
IL IG = 1.2 x IGT
TYP.
dV/dt
Linear slope up to:
VD = 67 % VDRM Gate open
Tj = 110°C MIN.
VTM ITM = 20 A tp = 380 µs
MAX.
IDRM
IRRM
VDRM = VRRM
Tj = 25°C
Tj = 110°C
MAX.
tq
VD = 67 % VDRM
dITM/dt = 30 A/µs
ITM = 20 A VR = 25 V
dVD/dt = 50 V/µs
Tj = 110°C
TYP.
Table 5: Thermal Resistance
Symbol
Rth(j-c) Junction to case (D.C.)
Rth(j-a) Junction to ambient
Parameter
Value
15
1.5
0.2
2
30
50
200
1.6
10
2
70
Unit
mA
V
V
µs
mA
mA
V/µs
V
µA
mA
µs
Value Unit
2.5 °C/W
60 °C/W
Figure 1: Maximum average power dissipation
versus average on-state current
P(W)
12
10 α = 180°
α = 120°
8 α = 90°
α = 60°
6
α = 30°
4
2
IT(AV)(A)
0
01 2 3 456
DC
360°
α
78
9
Figure 2: Correlation between maximum
average power dissipation and maximum
allowable temperature (Tamb and Tlead)
P(W)
12
α = 180°
10
8
6
4
2
0
0 20
Rth = 6°C/W
Rth = 4°C/W
Rth = 2°C/W
Tcase(°C)
Rth = 0°C/W
100
105
110
115
120
Tamb(°C)
125
40 60 80 100 120 140
2/6

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भाग संख्याविवरणविनिर्माण
TYN410RG10A SCRSTMicroelectronics
STMicroelectronics


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