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TPC8032-H डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-Channel MOS Type Field Effect Transistor - Toshiba Semiconductor

भाग संख्या TPC8032-H
समारोह Silicon N-Channel MOS Type Field Effect Transistor
मैन्युफैक्चरर्स Toshiba Semiconductor 
लोगो Toshiba Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=TPC8032-H?> डेटा पत्रक पीडीएफ

TPC8032-H pdf
Thermal Characteristics
Characteristic
Symbol
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Rth (ch-a)
Rth (ch-a)
Max
65.8
125
Unit
°C/W
°C/W
Marking (Note 5)
TPC8032-H
TPC8032
H
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a) (b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 500 μH, RG = 25 Ω, IAR = 15 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: * Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
Downloaded from Elcodis.com electronic components distributor
2
2007-12-25

विन्यास 7 पेज
डाउनलोड[ TPC8032-H Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
TPC8032-HSilicon N-Channel MOS Type Field Effect TransistorToshiba Semiconductor
Toshiba Semiconductor


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