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NTMFS4955NT3G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - ON Semiconductor

भाग संख्या NTMFS4955NT3G
समारोह Power MOSFET
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
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NTMFS4955NT3G pdf
NTMFS4955N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
JunctiontoCase (Drain)
JunctiontoAmbient – Steady State (Note 3)
JunctiontoAmbient – Steady State (Note 4)
JunctiontoAmbient – (t 10 s) (Note 3)
3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
4. Surfacemounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJA
RqJA
RqJA
Value
5.4
46.3
136.2
20.3
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
(transient)
V(BR)DSS
V(BR)DSSt
VGS = 0 V, ID = 250 mA
VGS = 0 V, ID(aval) = 11.0 A,
Tcase = 25°C, ttransient = 100 ns
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
VVDGSS
=
=
0 V,
24 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
DraintoSource On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V
ID = 30 A
ID = 15 A
VGS = 4.5 V
ID = 30 A
ID = 15 A
VDS = 1.5 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance Ratio
CISS
COSS
CRSS
CRSS /
CISS
VGS = 0 V, f = 1 MHz, VDS = 15 V
VGS = 0 V, VDS = 15 V, f = 1 MHz
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS (Note 6)
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 10 V, VDS = 15 V; ID = 30 A
TurnOn Delay Time
td(ON)
Rise Time
TurnOff Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Min
30
34
1.2
Typ Max Unit
V
V
21 mV/°C
1.0
10
±100
mA
nA
1.7 2.2
V
3.9 mV/°C
4.5 5.6
4.5
6.8 8.5 mW
6.7
52 S
1264
483
143
0.11
0.22
10.8
2.0
3.8
4.2
21.5
pF
nC
nC
9.5
32.7
16.4 ns
6.2
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