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NTMFS4926NT1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - ON Semiconductor

भाग संख्या NTMFS4926NT1G
समारोह Power MOSFET
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
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<?=NTMFS4926NT1G?> डेटा पत्रक पीडीएफ

NTMFS4926NT1G pdf
NTMFS4926N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
JunctiontoCase (Drain)
JunctiontoAmbient – Steady State (Note 3)
JunctiontoAmbient – Steady State (Note 4)
JunctiontoAmbient – (t 10 s) (Note 3)
3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
4. Surfacemounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJA
RqJA
RqJA
Value
5.8
46.3
136.2
20.4
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
(transient)
V(BR)DSS
V(BR)DSSt
VGS = 0 V, ID = 250 mA
VGS = 0 V, ID(aval) = 8.8 A,
Tcase =25°C, ttransient = 100 ns
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
VGS = 0 V,
VDS = 24 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
DraintoSource On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V
ID = 30 A
ID = 15 A
VGS = 4.5 V
ID = 30 A
ID = 15 A
VDS = 1.5 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance
CISS
COSS
CRSS
CRSS /
CISS
VGS = 0 V, f = 1 MHz, VDS = 15 V
VGS = 0 V, VDS = 15 V, f = 1 MHz
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS (Note 6)
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 10 V, VDS = 15 V; ID = 30 A
TurnOn Delay Time
td(ON)
Rise Time
TurnOff Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Min Typ Max
30
34
25
1.0
10
±100
1.32 1.6
3.8
5.6
5.6
9.0
8.7
40
2.2
7.0
11.2
1004
390
119
0.119
0.237
8.7
1.4
3.0
3.5
17.3
8.6
36.9
14.7
5.5
Unit
V
V
mV/°C
mA
nA
V
mV/°C
mW
S
pF
nC
nC
ns
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