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STT3998N डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual N-Channel Enhancement Mode MOSFET - SeCoS

भाग संख्या STT3998N
समारोह Dual N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स SeCoS 
लोगो SeCoS लोगो 
पूर्व दर्शन
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STT3998N pdf
Elektronische Bauelemente
STT3998N
Dual N-Ch Enhancement Mode Mos.FET
3.7 A, 20 V, RDS(ON) 58 m
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Gate-Threshold Voltage
VGS(th)
0.7
-
-
V VDS=VGS, ID= 250uA
Gate-Body Leakage
IGSS - - 1 uA VDS= 0V, VGS= 12V
Zero Gate Voltage Drain Current
On-State Drain Current a
- - 0.1
VDS= 16V, VGS= 0V
IDSS
uA
- -1
VDS= 16V, VGS= 0V, TJ= 55°C
ID(on)
30
-
-
A VDS = 5V, VGS= 4.5V
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage a
RDS(ON)
-
-
-
-
gfs - 10
VSD - 0.8
DYNAMIC b
58
82
-
-
VGS= 4.5V, ID= 3.7A
m
VGS= 2.5V, ID= 2.7A
S VDS= 10V, ID= 6.8A
V IS= 1.05A, VGS= 0V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - 7.5 -
Qgs
-
0.6
-
nC
VDS= 10V, VGS= 4.5V,
ID= 3.7A
Qgd - 1.0 -
Turn-on Delay Time
Td(on)
-
5
-
Rise Time
Turn-off Delay Time
Tr
Td(off)
-
-
12
13
-
-
nS
VDD= 10V, VGS= 4.5V,
RGEN= 15, ID= 1A
Fall Time
Tf - 7
Notes
a. Pulse testPW 300 us duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
-
http://www.SeCoSGmbH.com/
27-Aug-2010 Rev. A
Any changes of specification will not be informed individually.
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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
STT3998NDual N-Channel Enhancement Mode MOSFETSeCoS
SeCoS


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