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STT3981 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement Mode MOSFET - SeCoS

भाग संख्या STT3981
समारोह P-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स SeCoS 
लोगो SeCoS लोगो 
पूर्व दर्शन
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<?=STT3981?> डेटा पत्रक पीडीएफ

STT3981 pdf
Elektronische Bauelemente
STT3981
-1.6 A, -20 V, RDS(ON) 180 mΩ
P-Channel Enhancement Mode Mos.FET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Conditions
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Static
BVDSS -20 - - V VGS = 0, ID=250 uA
VGS(th) -0.4 - -1.1 V VDS = VGS, ID=250 uA
Gate Leakage Current
IGSS - - ±100 nA VGS = ±8 V
Drain-Source Leakage Current (Tj=25)
Drain-Source Leakage Current (Tj=70)
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage2
IDSS
RDS(ON)
gfs
VSD
- - -1 uA VDS = -20 V, VGS = 0
- - -20
VDS = -16 V, VGS = 0
- 100 150
VGS = -4.5 V, ID = -1.9 A
- 160 210 mVGS = -2.5 V, ID = -1.6 A
- 260 300
VGS = -1.8 V, ID = -0.7 A
-4-
S VDS = -5V, ID = -1.9A
- -0.84 -1.1 V IS = -1.0A, VGS = 0V
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time2
Rise Time
Turn-off Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Dynamic
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
- 6 7.5
- 0.52 -
- 1.02 -
- 50 65
- 40 60
- 168 180
- 64 75
- 450 -
Coss - 60 -
Crss - 47 -
nC ID = -1.9 A
VDS = -10 V
VGS = -4.5 V
VDS = -10 V
ID = -1 A
nS VGEN = -4.5 V
RG = 6 Ω
RL = 10 Ω
VGS = 0 V
pF VDS = -15 V
f = 1.0 MHz
Notes:
1. Pulse width limited by maximum junction temperature.
2. Pulse width300us, duty cycle2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 180 °C/W when mounted on minimum copper pad.
01-June-2005 Rev. B
Page 2 of 5

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STT3981P-Channel Enhancement Mode MOSFETSeCoS
SeCoS


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