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STT3962NE डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - SeCoS

भाग संख्या STT3962NE
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स SeCoS 
लोगो SeCoS लोगो 
पूर्व दर्शन
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<?=STT3962NE?> डेटा पत्रक पीडीएफ

STT3962NE pdf
Elektronische Bauelemente
STT3962NE
2.3A , 60V , RDS(ON) 0.153
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage Current
VGS(th)
IGSS
1
-
- - V VDS=VGS, ID=250uA
- 100 uA VDS=0, VGS=20V
Zero Gate Voltage Drain Current
On-State Drain Current 1
- -1
VDS=48V, VGS=0
IDSS
uA
- - 10
VDS=48V, VGS=0, TJ=55°C
ID(on)
5
-
-
A VDS =5V, VGS=10V
Drain-Source On-Resistance 1
Forward Transconductance 1
Diode Forward Voltage 1
RDS(ON)
gfs
VSD
--
--
- 10
- 0.8
Dynamic 2
0.153
0.185
-
-
VGS=10V, ID=2.3A
VGS=4.5V, ID=2.1A
S VDS=5V, ID=2.3A
V IS=1.05A, VGS=0
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - 3 -
VDS=15V,
Qgs - 0.6 - nC VGS=4.5V,
Qgd - 1 -
ID=2.3A
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 5 -
VDD=15V,
Tr - 12 - nS VGS=4.5V,
Td(off) - 13 -
RGEN=15,
Tf - 7 -
ID=1A
Notes:
1. Pulse test: PW 300us duty cycle 2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
4-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
STT3962NN-Channel Enhancement Mode MOSFETSeCoS
SeCoS
STT3962NEN-Channel Enhancement Mode MOSFETSeCoS
SeCoS


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