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STT3962N डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - SeCoS

भाग संख्या STT3962N
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स SeCoS 
लोगो SeCoS लोगो 
पूर्व दर्शन
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STT3962N pdf
Elektronische Bauelemente
STT3962N
N-Channel Enhancement Mode Mos.FET
2.3 A, 60 V, RDS(ON) 0.153
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Gate-Threshold Voltage
VGS(th)
1
-
-
V VDS=VGS, ID= 250uA
Gate-Body Leakage Current
IGSS - - 100 uA VDS= 0V, VGS= 20V
Zero Gate Voltage Drain Current
On-State Drain Current a
- -1
VDS= 48V, VGS= 0V
IDSS
uA
- - 10
VDS= 48V, VGS=0 V, TJ= 55°C
ID(on)
5
-
-
A VDS = 5V, VGS= 10 V
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage a
RDS(ON)
-
-
- 0.153
- 0.185
gfs - 10 -
VSD - 0.80 -
DYNAMIC b
VGS= 10V, ID= 2.3A
VGS= 4.5V, ID= 2.1A
S VDS= 5V, ID= 2.3A
V IS= 1.05A, VGS= 0V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - 3 -
Qgs
-
0.6
-
nC
VDS= 15V, VGS= 4.5V,
ID= 2.3A
Qgd - 1.0 -
Turn-on Delay Time
Td(on)
-
5
-
Rise Time
Turn-off Delay Time
Tr
Td(off)
-
-
12
13
-
-
nS
VDD= 15V, VGS= 4.5V,
RGEN= 15, ID= 1A
Fall Time
Tf - 7
Notes
a. Pulse testPW 300 us duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
-
http://www.SeCoSGmbH.com/
20-Aug-2010 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
STT3962NN-Channel Enhancement Mode MOSFETSeCoS
SeCoS
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