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STT3930N डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - SeCoS

भाग संख्या STT3930N
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स SeCoS 
लोगो SeCoS लोगो 
पूर्व दर्शन
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<?=STT3930N?> डेटा पत्रक पीडीएफ

STT3930N pdf
Elektronische Bauelemente
STT3930N
3.5A , 30V , RDS(ON) 58m
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage Current
VGS(th)
IGSS
1
-
- - V VDS=VGS, ID=250uA
-
±100
nA VDS=0, VGS=±20V
Zero Gate Voltage Drain Current
On-State Drain Current 1
- -1
VDS=24V, VGS=0
IDSS
uA
- - 25
VDS=24V, VGS=0, TJ=55°C
ID(on)
6
-
-
A VDS =5V, VGS=10V
Drain-Source On-Resistance 1
Forward Transconductance 1
RDS(ON)
-
-
- 58
VGS=10V, ID=3.5A
m
- 82
VGS=4.5V, ID=3A
gfs
- 6.9 -
S VDS=15V, ID=3.5A
Diode Forward Voltage
VSD - 0.8 -
Dynamic 2
V IS=2.3A, VGS=0
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - 2.2 -
VDS=15V,
Qgs - 0.5 - nC VGS=4.5V,
Qgd - 0.8 -
ID=3.5A
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
- 16
-
VDD=25V,
Tr - 5 - nS VGEN=10V,
Td(off)
- 23
-
RL=25,
Tf - 3 -
ID=1A
Notes:
1. Pulse test: PW 300us duty cycle 2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
25-Nov-2013 Rev. A
Any changes of specification will not be informed individually.
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STT3930NN-Channel Enhancement Mode MOSFETSeCoS
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