SST11CP15E डेटा पत्रक PDF( Datasheet डाउनलोड )

डेटा पत्रक - 4.9-5.9 GHz High-Linearity Power Amplifier - Microchip

भाग संख्या SST11CP15E
समारोह 4.9-5.9 GHz High-Linearity Power Amplifier
मैन्युफैक्चरर्स Microchip 
लोगो Microchip लोगो 
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SST11CP15E pdf
4.9-5.9 GHz High-Linearity Power Amplifier
Product Description
Data Sheet
The SST11CP15E is a high-linearity power amplifier designed for 802.11 a/n/ac embedded applica-
tions. It has low power consumption and is based on the highly-reliable InGaP/GaAs HBT technology.
The SST11CP15E offers a wide operating-voltage range from VCC 3.3V to 5.0V. It can be easily config-
ured for high-linearity, high-efficiency applications while operating over the entire 802.11a frequency
band for U.S., European, and Japanese markets (4.9-5.9 GHz).
The SST11CP15E has excellent linearity, typically ~3% EVM at 19.5 dBm output power for 54 Mbps
802.11a operation, at 5.0V, while meeting 802.11a spectrum mask at 24 dBm. The power amplifier
also provides 16 dBm at 1.8% EVM with 802.11ac, 351 Mbps modulation. SST11CP15E includes a
wide dynamic-range, linear power detector that is insensitive to temperature and Voltage Standing
Wave Ratio (VSWR).
The power amplifier IC also features easy board-level operation along with high-speed power-up/down
control. Low reference current (typically 4 mA) makes the SST11CP15E controllable by an on/off
switching signal directly from the baseband chip. These features coupled with low operating current
make the SST11CP15E ideal for the final stage power amplification in battery-powered 802.11a/n/ac
WLAN transmitter applications.
The SST11CP15E is offered in 12-contact UQFN package with 0.6 mm maximum thickness. See Figure
2 for pin assignments and Table 1 for pin descriptions.
©2013 Silicon Storage Technology, Inc.

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