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HY1808W डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - HOOYI

भाग संख्या HY1808W
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स HOOYI 
लोगो HOOYI लोगो 
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<?=HY1808W?> डेटा पत्रक पीडीएफ

HY1808W pdf
HY1808P/W
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
75
±25
175
-55 to 175
85
IDM Pulsed Drain Current *
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Avalanche Ratings
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
340**
85
68
300
150
0.5
62.5
EAS Avalanche Energy, Single Pulsed
L=0.5mH
670***
Note * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=60V
Electrical Characteristics
(T
A
=
25°C
Unless
Otherwise
Noted)
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON)* Drain-Source On-state Resistance
Diode Characteristics
VGS=0V, IDS=250µA
VDS=75V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±25V, VDS=0V
VGS=10V, IDS=42A
VSD*
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=42A, VGS=0V
ISD=42A, dlSD/dt=100A/µs
HY1808P/W
Min. Typ. Max.
75 -
-
- -1
- - 10
234
- - ±100
- 8 10
- 0.8 1
- 48 -
- 110 -
Unit
V
µA
V
nA
m
V
ns
nC
2 www.hooyi-semi.com

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डाउनलोड[ HY1808W Datasheet.PDF ]


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