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HY1808P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - HOOYI

भाग संख्या HY1808P
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स HOOYI 
लोगो HOOYI लोगो 
पूर्व दर्शन
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<?=HY1808P?> डेटा पत्रक पीडीएफ

HY1808P pdf
HY1808P
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300µs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Avalanche Ratings
EAS Avalanche Energy, Single Pulsed
Note *VD=50V
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
L=0.3mH
Rating
75
±25
175
-55 to 175
85
360
85
68
300
185
0.5
62.5
1.1*
Unit
V
°C
°C
A
A
A
W
°C/W
J
Electrical Characteristics
(T
A
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
Diode Characteristics
VSDa Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS=0V, IDS=250µA
VDS=75V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±25V, VDS=0V
VGS=10V, IDS=40A
ISD=40A, VGS=0V
ISD=40A, dlSD/dt=100A/µs
Min.
75
-
-
2
-
-
-
-
-
HY1808P
Typ. Max.
--
-1
- 10
34
- ±100
8 11
0.8 1
48 -
110 -
Unit
V
µA
V
nA
m
V
ns
nC
2 www.hooyi-semi.com

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डाउनलोड[ HY1808P Datasheet.PDF ]


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