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ME06N10-G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel 100-V (D-S) MOSFET - Matsuki

भाग संख्या ME06N10-G
समारोह N-Channel 100-V (D-S) MOSFET
मैन्युफैक्चरर्स Matsuki 
लोगो Matsuki लोगो 
पूर्व दर्शन
1 Page
		
<?=ME06N10-G?> डेटा पत्रक पीडीएफ

ME06N10-G pdf
ME06N10/ME06N10-G
N-Channel 100-V (D-S) MOSFET
Electrical Characteristics (TC =25Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max Unit
STATIC
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON)
VSD
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance a
Diode Forward Voltage
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±20V
VDS=100V, VGS=0V
VGS=10V, ID= 3A
VGS=4.5V, ID=1A
IS=6.5A, VGS=0V
100 V
1 3V
±100 nA
1 μA
160 200
mΩ
200 260
0.9 1.3
V
DYNAMIC
Qg Total Gate Charge
8.2
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=50V, VGS=5V, ID=6.5A
4.3 nC
5.3
Rg Gate Resistance
Ciss Input Capacitance
VDS=0V, VGS=0V, f=1MHz
1.1 Ω
396
Coss
Output Capacitance
VDS=25V, VGS=0V, f=1MHz
47
Crss Reverse Transfer Capacitance
30
td(on)
Turn-On Delay Time
9.6
tr
td(off)
Turn-On Rise Time
Turn-Off Delay Time
VDD=50V, RL =50Ω
VGEN=10V, RG=2.5Ω
4.2
25
tf Turn-Off Fall Time
3.2
Notes: a, pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
pF
ns
Dec, 2013 Ver1.0
02

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