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ME25N06 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement MOSFET - Matsuki

भाग संख्या ME25N06
समारोह N-Channel Enhancement MOSFET
मैन्युफैक्चरर्स Matsuki 
लोगो Matsuki लोगो 
पूर्व दर्शन
1 Page
		
<?=ME25N06?> डेटा पत्रक पीडीएफ

ME25N06 pdf
ME25N06(-G)
N-Channel Enhancement MOSFET
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max
STATIC
BVDSS
VGS(th)
IGSS
IDSS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±25V
VDS=60V, VGS=0V
VDS=60V, VGS=0V,TJ=55
60
1
3
±100
1
10
RDS(ON)
Drain-Source On-Resistance a
VGS=10V, ID= 15A
VGS=4.5V, ID= 10A
52 62
70 86
VSD Diode Forward Voltage
IS=15A, VGS=0V
1
DYNAMIC
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=48V, VGS=10V, ID=16A
17
4.2
5
Rg
Ciss
Coss
Crss
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=0V, VGS=0V, f=1MHz
VDS=30V, VGS=0V,
f=1MHz
0.6
523
47
14
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=30V, RL =15Ω
ID=1A, VGEN=10V
RG=3Ω
11
13
34
4
Notes: a, pulse test: pulse width300us, duty cycle2%,Guaranteed by design, not subject to production testing.
Matsuki reserves the right to improve product design, functions and reliability without notice.
Unit
V
V
nA
μA
mΩ
V
nC
Ω
pF
ns
Dec,2008-Ver1.0
02

विन्यास 5 पेज
डाउनलोड[ ME25N06 Datasheet.PDF ]


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