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FZT1151A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR - Zetex Semiconductors

भाग संख्या FZT1151A
समारोह PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
मैन्युफैक्चरर्स Zetex Semiconductors 
लोगो Zetex Semiconductors लोगो 
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FZT1151A pdf
FZT1151A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
MIN.
VALUE
TYP. MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -45
-95
V IC=-100µA
Collector-Emitter
Breakdown Voltage
VCES
-40 -90
V IC=-100µA
Collector-Emitter
VCEO -40 -85
Breakdown Voltage
V IC=-10mA *
Collector-Emitter
Breakdown Voltage
VCEV
-40 -90
V IC=-100µA, VEB=+1V
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
-8.5
V IE=-100µA
Collector Cut-Off
Current
ICBO
-0.3 -100 nA
VCB=-36V
Emitter Cut-Off Current IEBO
Collector Emitter
Cut-Off Current
ICES
-0.3 -100 nA
-0.3 -100 nA
VEB=-4V
VCE=-32V
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
-60
-120
-140
-170
-200
-985
-90
-180
-220
-260
-300
mV
mV
mV
mV
mV
-1100 mV
IC=-0.1A, IB=-1.0mA*
IC=-0.5A, IB=-5mA*
IC=-1A, IB=-20mA*
IC=-1.8A, IB=-70mA*
IC=-3A, IB=-250mA*
IC=-3A, IB=-250mA*
Base-Emitter Turn-On VBE(on)
Voltage
-850 -1000 mV
IC=-3A, VCE=-2V*
Static Forward Current hFE
Transfer Ratio
Transition Frequency fT
270 450
250 400 800
180 300
100 190
45
IC=-10mA, VCE=-2V*
IC=-0.5A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-3A, VCE=-2V*
IC=-5A, VCE=-2V*
145 MHz IC=-50mA, VCE=-10V
f=50MHz
Output Capacitance
Ccb
40 pF VCB=-10V, f=1MHz
Switching Times
ton
170 ns IC=-2A, IB=-20mA,
VCC=-30V
toff 460 ns IC=-2A, IB=±20mA,
VCC=-30V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%.

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