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FZT1147A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR - Zetex Semiconductors

भाग संख्या FZT1147A
समारोह PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
मैन्युफैक्चरर्स Zetex Semiconductors 
लोगो Zetex Semiconductors लोगो 
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FZT1147A pdf
FZT1147A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
MIN.
VALUE
TYP. MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -15
-35
V IC=-100µA
Collector-Emitter
Breakdown Voltage
VCES
-12 -25
V IC=-100µA
Collector-Emitter
Breakdown Voltage
VCEO -12 -25
V IC=-10mA *
Collector-Emitter
Breakdown Voltage
VCEV
-12 -25
V IC=-100µA, VEB=+1V
Emitter-Base Breakdown V(BR)EBO -5
Voltage
-8.5
V IE=-100µA
Collector Cut-Off Current ICBO
-0.3 -100 nA
VCB=-12V
Emitter Cut-Off Current IEBO
-0.3 -100 nA
VEB=-4V
Collector Emitter Cut-Off ICES
Current
-0.3 -100 nA
VCE=-10V
Collector-Emitter
Saturation Voltage
VCE(sat)
-25
-70
-90
-115
-250
-50
-110
-130
-170
-400
mV
mV
mV
mV
mV
IC=-0.1A, IB=-1.0mA*
IC=-0.5A, IB=-2.5mA*
IC=-1A, IB=-6mA*
IC=-2A, IB=-20mA*
IC=-5A, IB=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-950 -1050 mV
IC=-5A, IB=-50mA*
Base-Emitter Turn-On
Voltage
VBE(on)
-905 -1000 mV
IC=-5A, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE
270 450
250 400 850
200 340
150 245
90 145
50
IC=-10mA, VCE=-2V*
IC=-0.5A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-5A, VCE=-2V*
IC=-10A, VCE=-2V*
IC=-20A, VCE=-2V*
Transition Frequency
fT
115 MHz IC=-50mA, VCE=-10V
f=50MHz
Output Capacitance
Ccb
80 pF VCB=-10V, f=1MHz
Switching Times
ton
150 ns IC=-4A, IB=-40mA,
VCC=-10V
toff 220 ns IC=-4A, IB=±40mA,
VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%.

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