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FZT1053 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR - Zetex Semiconductors

भाग संख्या FZT1053
समारोह NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
मैन्युफैक्चरर्स Zetex Semiconductors 
लोगो Zetex Semiconductors लोगो 
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FZT1053 pdf
FZT1053A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX.
UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 150
250
V IC=100µA
Collector-Emitter
Breakdown Voltage
VCES
150 250
V IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO
75
100
V IC=10mA
Collector-Emitter
Breakdown Voltage
VCEV
150 250
V IC=100µA, VEB=1V
Emitter-Base
Breakdown Voltage
V(BR)EBO 7.5
8.8
V IE=100µA
Collector Cut-Off
Current
ICBO
0.9 10
nA VCB=120V
Emitter Cut-Off Current IEBO
Collector Emitter
Cut-Off Current
ICES
0.3 10
1.5 10
nA VEB=4V
nA VCES=120V
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
21 30 mV IC=0.2A, IB=20mA*
55 75 mV IC=0.5A, IB=20mA*
150 200 mV IC=1A, IB=10mA*
160 210 mV IC=2A, IB=100mA*
350 440 mV IC=4.5A, IB=200mA*
900 1000 mV IC=3A, IB=100mA*
Base-Emitter Turn-On VBE(on)
Voltage
825 950 mV IC=3A, VCE=2V*
Static Forward Current hFE
Transfer Ratio
Switching Times
ton
toff
Transition Frequency fT
270 440
300 450 1200
300 450
40 60
20
IC=10mA, VCE=2V*
IC=0.5A, VCE=2V*
IC=1A, VCE=2V*
IC=4.5A, VCE=2V*
IC=10A, VCE=2V*
162 ns IC=2A, IB1=IB2=±20mA,
VCC=50V
900 ns IC=2A, IB1=IB2=±20mA,
VCC=50V
140 MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
21 30 pF VCB=10V, f=1MHz

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