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FZT1051A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR - Zetex Semiconductors

भाग संख्या FZT1051A
समारोह NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
मैन्युफैक्चरर्स Zetex Semiconductors 
लोगो Zetex Semiconductors लोगो 
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FZT1051A pdf
FZT1051A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 150
190
V IC=100µA
Collector-Emitter
Breakdown Voltage
VCES
150 190
V IC=100µA *
Collector-Emitter
Breakdown Voltage
VCEO 40 60
V IC=10mA
Collector-Emitter
Breakdown Voltage
VCEV
150 190
V IC=100µA, VEB=1V
Emitter-Base Breakdown V(BR)EBO 5
Voltage
9
V IE=100µA
Collector Cut-Off Current ICBO
0.3 10
nA VCB=120V
Emitter Cut-Off Current IEBO
0.3 10
nA VEB=4V
Collector Emitter Cut-Off ICES
Current
0.3 10
nA VCES=120V
Collector-Emitter
Saturation Voltage
VCE(sat)
17 25 mV IC=0.2A, IB=10mA*
85 120 mV IC=1A, IB=10mA*
140 180 mV IC=2A, IB= 20mA*
250 340 mV IC=5A, IB=100mA*
Base-Emitter
Saturation Voltage
VBE(sat)
980 1100 mV IC=5A, IB=100mA*
Base-Emitter Turn-On
Voltage
VBE(on)
915 1000 mV IC=5A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE
290 440
270 450 1200
130 220
40 55
IC=10mA, VCE=2V*
IC=1A, VCE=2V*
IC=5A, VCE=2V*
IC=10A, VCE=2V*
Transition Frequency
fT
155 MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
27 40 pF VCB=10V, f=1MHz
Turn-on Time
ton
220 ns IC=3A, IB=30mA, VCC=10V
Turn-off Time
toff
540 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%

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