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FZT1047A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR - Zetex Semiconductors

भाग संख्या FZT1047A
समारोह NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
मैन्युफैक्चरर्स Zetex Semiconductors 
लोगो Zetex Semiconductors लोगो 
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FZT1047A pdf
FZT1047A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
VALUE
TYP. MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 35
65
V IC=100µA
Collector-Emitter
Breakdown Voltage
VCES 35 55
V IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO 10 16
V IC=10mA
Collector-Emitter
Breakdown Voltage
VCEV 35 60
V IC=100µA, VEB=1V
Emitter-Base Breakdown V(BR)EBO 5
Voltage
8.9
V IE=100µA
Collector Cut-Off Current ICBO
0.3 10
nA VCB=20V
Emitter Cut-Off Current IEBO
0.3 10
nA VEB=4V
Collector Emitter Cut-Off ICES
Current
0.3 10
nA VCES=20V
Collector-Emitter
Saturation Voltage
VCE(sat)
25 40 mV IC=0.5A, IB=10mA*
50 70 mV IC=1A, IB=10mA*
140 200 mV IC=3A, IB=15mA*
220 350 mV IC=5A, IB=25mA*
Base-Emitter
Saturation Voltage
VBE(sat)
925 1000 mV IC=5A, IB=25mA*
Base-Emitter Turn-On
Voltage
VBE(on)
890 975 mV IC=5A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE
280 430
290 440
300 450 1200
200 330
60 110
IC=10mA, VCE=2V*
IC=0.5A, VCE=2V*
IC=1A, VCE=2V*
IC=5A, VCE=2V*
IC=20A, VCE=2V*
Transition Frequency
fT
150 MHz IC=50mA, VCE=10V
f=50MHz
Output Capacitance
Cobo
85 110 pF VCB=10V, f=1MHz
Switching Times
ton
130 ns IC=4A, IB=40mA, VCC=10V
toff 230 ns IC=4A, IB=±40mA,
VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%

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अनुशंसा डेटापत्रक

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FZT1047ANPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTORZetex Semiconductors
Zetex Semiconductors


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