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FZ800R33KF2C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT-Module - Infineon

भाग संख्या FZ800R33KF2C
समारोह IGBT-Module
मैन्युफैक्चरर्स Infineon 
लोगो Infineon लोगो 
पूर्व दर्शन
1 Page
		
<?=FZ800R33KF2C?> डेटा पत्रक पीडीएफ

FZ800R33KF2C pdf
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FZ800R33KF2C
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Tvj = 25°C
Tvj = -25°C
Dauergleichstrom
ContinuousDCforwardcurrent

PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
tP = 1 ms
Grenzlastintegral
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
Spitzenverlustleistung
Maximumpowerdissipation
Tvj = 125°C
Mindesteinschaltdauer
Minimumturn-ontime

CharakteristischeWerte/CharacteristicValues
Durchlassspannung
Forwardvoltage
IF = 800 A, VGE = 0 V
IF = 800 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Rückstromspitze
Peakreverserecoverycurrent
IF = 800 A, - diF/dt = 4500 A/µs (Tvj=125°C) Tvj = 25°C
VR = 1800 V
Tvj = 125°C
VGE = -15 V
Sperrverzögerungsladung
Recoveredcharge
IF = 800 A, - diF/dt = 4500 A/µs (Tvj=125°C) Tvj = 25°C
VR = 1800 V
Tvj = 125°C
VGE = -15 V
AbschaltenergieproPuls
Reverserecoveryenergy
IF = 800 A, - diF/dt = 4500 A/µs (Tvj=125°C) Tvj = 25°C
VR = 1800 V
Tvj = 125°C
VGE = -15 V
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proDiode/perdiode
Wärmewiderstand,GehäusebisKühlkörper proDiode/perdiode
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

VorläufigeDaten
PreliminaryData
VRRM 
IF 
IFRM 
I²t 
PRQM 
ton min 
3300
3300
800
1600
220
1600
10,0
V
A
A
 kA²s
 kW
 µs
min. typ. max.
VF
2,80 3,50 V
2,80 3,50 V
1100
A
IRM  1300  A
500 µC
Qr  900  µC
490 mJ
Erec  1150  mJ
RthJC

 26,0 K/kW
RthCH
 18,0
K/kW
Tvj op
-40

125 °C
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:2.1
2

विन्यास 8 पेज
डाउनलोड[ FZ800R33KF2C Datasheet.PDF ]


शेयर लिंक


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