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FTP08N06 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - InPower Semiconductor

भाग संख्या FTP08N06
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स InPower Semiconductor 
लोगो InPower Semiconductor लोगो 
पूर्व दर्शन
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<?=FTP08N06?> डेटा पत्रक पीडीएफ

FTP08N06 pdf
OFF Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
BVDSS
BVDSS/TJ
Drain-to-Source Breakdown Voltage
BreakdownVoltage Temperature
Coefficient, Figure 11.
60 --
-- 0.08
-- --
IDSS Drain-to-Source Leakage Current
-- --
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-- --
-- --
Max.
--
--
25
250
100
-100
Units
V
V/ oC
µA
nA
Test Conditions
VGS=0V, ID=250µA
Reference to 25 oC,
ID=250 µA
VDS=60V, VGS=0V
VDS=48V, VGS=0V
TJ=150 oC
VGS=+20 V
VGS= -20V
ON Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
VGS(TH)
Static Drain-to-Source On-Resistance
Figure 9 and 10.
Gate Threshold Voltage, Figure 12.
--
2.0
6.5
--
gfs Forward Transconductance
-- 83
Max.
8.0
4.0
--
Units
m
V
S
Test Conditions
VGS=10V, ID=45A
(NOTE *4)
VDS=VGS, ID=250µA
VDS=15V, ID=75A
(NOTE *4)
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 4000 --
-- 1050 --
-- 136 --
pF
Qg Total Gate Charge
Qgs Gate-to-Source Charge
-- 87 --
-- 32 --
nC
Qgd Gate-to-Drain (“Miller”) Charge
-- 21 --
Test Conditions
VGS=0 V
VDS=25 V
f =1.0MHz
Figure 14
VDD=30V
ID=75A
VGS=10 V
Figure 15
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
trise
td(OFF)
tfall
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units
Test Conditions
-- 17 --
-- 110 --
-- 75 --
-- 67 --
ns
VDD=30 V
ID=75A
VGS=10 V
RG=4.7
©2007 InPower Semiconductor Co., Ltd.
FTP08N06 REV. B June 2007
Page 2 of 11

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