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2SC3459 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon NPN Power Transistor - INCHANGE

भाग संख्या 2SC3459
समारोह Silicon NPN Power Transistor
मैन्युफैक्चरर्स INCHANGE 
लोगो INCHANGE लोगो 
पूर्व दर्शन
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<?=2SC3459?> डेटा पत्रक पीडीएफ

2SC3459 pdf
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3459
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞
VCEO(SUS) Collector-Emitter Sustaining Voltage
IC= 2A; IB1= -IB2= 0.4A;
L= 2mH; clamped
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
800
800
1100
V
V
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
2.0 V
VBE(sat) Base-Emitter Saturation Voltage
ICBO Collector Cutoff Current
IC= 2A; IB= 0.4A
VCB= 800V; IE=0
1.5 V
10 μA
IEBO Emitter Cutoff Current
VEB= 5V; IC=0
10 μA
hFE-1
DC Current Gain
IC= 0.3A; VCE= 5V
10 40
hFE-2
DC Current Gain
IC= 1.5A; VCE= 5V
8
COB Output Capacitance
IE= 0; VCB= 10V; ftest=1.0MHz 90 pF
fT
Current-Gain—Bandwidth Product
IC= 0.3A; VCE= 10V
15 MHz
Switching times
ton Turn-on Time
tstg Storage Time
tf Fall Time
IC= 3A , IB1= 0.6A; IB2= -1.2A
RL= 133Ω; VCC=400V
0.5 μs
3.0 μs
0.3 μs
hFE-1 Classifications
K LM
10-20 15-30 20-40
isc Websitewww.iscsemi.cn
2

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