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SM3116NAU डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - Sinopower

भाग संख्या SM3116NAU
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स Sinopower 
लोगो Sinopower लोगो 
पूर्व दर्शन
1 Page
		
<?=SM3116NAU?> डेटा पत्रक पीडीएफ

SM3116NAU pdf
SM3116NAU
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VD S S
VGSS
TJ
TSTG
IS
IDP
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Pulse Drain Current Tested
ID a Continuous Drain Current
PD Maximum Power Dissipation
RqJC Thermal Resistance-Junction to Case
RqJA Thermal Resistance-Junction to Ambient
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Steady State
t £ 10s
Steady State
30
±20
150
-55 to 150
20
140
90
60*
48
50
20
2.5
20
50
V
°C
°C
A
A
A
W
°C/W
°C/W
IAS b Avalanche Current, Single pulse
L=0.5mH
20 A
EAS b Avalanche Energy, Single pulse
L=0.5mH
100 mJ
Note a* Current is limited by bond wire.
Note bUIS tested and pulse width are limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.6 - February, 2014
2
www.sinopowersemi.com

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