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GP801DDS18 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual Switch Low VCE(SAT) IGBT Module - Dynex Semiconductor

भाग संख्या GP801DDS18
समारोह Dual Switch Low VCE(SAT) IGBT Module
मैन्युफैक्चरर्स Dynex Semiconductor 
लोगो Dynex Semiconductor लोगो 
पूर्व दर्शन
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<?=GP801DDS18?> डेटा पत्रक पीडीएफ

GP801DDS18 pdf
GP801DDS18
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
Test Conditions
VCES
VGES
IC
IC(PK)
Pmax
V
isol
Collector-emitter voltage
Gate-emitter voltage
V = 0V
GE
-
Continuous collector current
Tcase = 70˚C
Peak collector current
1ms, T = 105˚C
case
Max. transistor power dissipation T = 25˚C, T = 150˚C
case
j
Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Max. Units
1800 V
±20 V
800 A
1600 A
6000 W
4000 V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Rth(j-c)
Thermal resistance - transistor (per arm)
Continuous dissipation -
junction to case
Rth(j-c)
Thermal resistance - diode (per arm)
Continuous dissipation -
junction to case
Rth(c-h)
Thermal resistance - case to heatsink (per module) Mounting torque 5Nm
(with mounting grease)
T Junction temperature
j
Transistor
Diode
T Storage temperature range
stg
- Screw torque
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Min. Max. Units
- 21 ˚C/kW
- 40 ˚C/kW
- 8 ˚C/kW
- 150 ˚C
- 125 ˚C
–40 125 ˚C
- 5 Nm
- 2 Nm
- 10 Nm
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

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भाग संख्याविवरणविनिर्माण
GP801DDS18Dual Switch Low VCE(SAT) IGBT ModuleDynex Semiconductor
Dynex Semiconductor


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