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GP800FSS12 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Powerline N-Channel Single Switch IGBT Module Preliminary Information - Dynex Semiconductor

भाग संख्या GP800FSS12
समारोह Powerline N-Channel Single Switch IGBT Module Preliminary Information
मैन्युफैक्चरर्स Dynex Semiconductor 
लोगो Dynex Semiconductor लोगो 
पूर्व दर्शन
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<?=GP800FSS12?> डेटा पत्रक पीडीएफ

GP800FSS12 pdf
GP800FSS12
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
Tcase = 25˚C unless stated otherwise.
Symbol
Parameter
Test Conditions
VCES
VGES
IC
IC(PK)
Pmax
V
isol
Collector-emitter voltage
Gate-emitter voltage
VGE = 0V
-
Collector current
Maximum power dissipation
Isolation voltage
DC, Tcase = 25˚C
DC, Tcase = 75˚C
1ms, T = 75˚C
case
Tcase = 25˚C (Transistor)
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Max.
1200
±20
1050
800
1600
6000
2500
Units
V
V
A
A
A
W
V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
R
th(j-c)
Rth(j-c)
Rth(c-h)
Thermal resistance - transistor
Thermal resistance - diode
Thermal resistance - Case to heatsink
(per module)
T
j
Junction temperature
Tstg Storage temperature range
- Screw torque
Conditions
DC junction to case
DC junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Min. Max. Units
- 21 oC/kW
- - 40 oC/kW
- 8 oC/kW
- 150 oC
- 125 oC
–40 125 oC
- 5 Nm
- 2 Nm
- 10 Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
2/11

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